Organic EL display device

ABSTRACT

In an organic EL display device having at least one electrode, a light emitting material layer and another electrode that are stacked in each pixel region formed on a surface of a substrate, wherein the light emitting material layer is formed in an opening portion of a bank film which separates the pixel region from other pixel regions arranged close to the pixel region so that the inside of the opening portion of the bank film is filled with the light emitting material layer, a light reflection function is imparted to at least a side wall surface of the opening portion of the bank film, so that the light take-out efficiency of the organic EL display device is enhanced.

CROSS-REFERENCE TO RELATED APPLICATION

This application is a continuation of U.S. application Ser. No.10/804,102, filed Mar. 19, 2004 now U.S. Pat. No. 7,091,658; saidapplication also claims priority from Japanese applicationJP2003-078112, filed on Mar. 20, 2003, the entire contents of both arehereby incorporated by reference into this application.

BACKGROUND OF THE INVENTION

The present invention relates to an organic EL display device, and, moreparticularly, to an organic EL display device in which each pixel regionis partitioned by a bank film from other pixel regions that are arrangedclose to the pixel region.

For example, an active-matrix type organic EL display device includes,on a surface of a substrate thereof, gate signal lines, which extend inthe x direction and are arranged in parallel in the y direction, anddrain signal lines, which extend in the y direction and are arranged inparallel in the x direction, wherein rectangular regions which arebounded by these signal lines define pixel regions. Each pixel regionincludes a switching element, which is turned on in response to ascanning signal received from the one gate signal line, and a pixelelectrode to which a video signal is supplied from the one drain signalline through the switching element. Here, a counter electrode is stackedover an upper surface of the pixel electrode by way of a light emittingmaterial layer. A signal which becomes a reference with respect to thevideo signal is supplied to the counter electrode. A current is made toflow into the light emitting material layer through the above-mentionedrespective electrodes, and the light emitting material layer emits lightin response to this current. The emission of light is visible throughone electrode (the light transmitting conductive film) of theabove-mentioned respective electrodes.

Here, although the above-mentioned signal lines and electrodes areformed by selective etching using photolithography, the light emittingmaterial layer is usually formed using a so-called vacuum evaporationshadow mask. This is because, when the light emitting material layercontains moisture or the like, the light emitting material layer iseasily degenerated.

Further, the light emitting material layer is in a liquid state when itis applied to the substrate, and, hence, a bank film made of resin, forexample, is preliminarily formed for partitioning each pixel region fromother pixel regions arranged close to the pixel, and the light emittingmaterial layer is filled in the inside of an opening portion formed inthe bank film (see the following patent literature 1).

[Patent Literature 1]

Japanese Unexamined Patent Publication 2000-176660.

SUMMARY OF THE INVENTION

In an organic EL display device having such a constitution, anenhancement of the light take-out efficiency is strongly desired alongwith miniaturization of the pixel regions. However, as described above,when the bank film which partitions the respective pixel regions isformed, a portion of the light from the light emitting material layerenters the inside of the bank film, and this light is not effectivelyused for enhancement of the luminance of the pixels.

The present invention has been made in view of such circumstances, andit is an object of the present invention to provide an organic ELdisplay device which exhibits a favorable light take-out efficiency.

A summary of representative Examples of the invention disclosed in thepresent application is as follows.

EXAMPLE 1

An organic EL display device according to the present invention ischaracterized in that, at least one electrode, a light emitting materiallayer and another electrode are stacked on each pixel region formed on asurface of a substrate, the light emitting material layer is formed in astate such that the light emitting material layer is filled in theinside of an opening portion formed in a bank film which partitions thepixel region and other pixel regions which are arranged close to thepixel region, and a light reflection function is imparted to at least aside wall surface of the opening portion of the bank film.

EXAMPLE 2

An organic EL display device according to the present invention ischaracterized in that, at least one electrode, a light emitting materiallayer and another electrode are stacked on each pixel region formed on asurface of a substrate, the light emitting material layer is formed in astate such that the light emitting material layer is filled in theinside of an opening portion formed in a bank film which partitions thepixel region and other pixel regions arranged close to the pixel region,and a material layer having an optical refractive index which differsfrom the optical refractive index of the material of the bank film isformed on at least a side wall surface of the opening portion of thebank film.

EXAMPLE 3

An organic EL display device according the present invention ischaracterized in that, on the premise of constitution of the Example 2,the material layer having an optical refractive index which differs fromthe optical refractive index of the material of the bank film has theoptical refractive index thereof set larger than the optical refractiveindex of the bank film.

EXAMPLE 4

An organic EL display device according to the present invention ischaracterized in that, at least one electrode, a light emitting materiallayer and another electrode are stacked on each pixel region formed on asurface of a substrate, the light emitting material layer is formed in astate such that the light emitting material layer is filled in theinside of an opening portion formed in a bank film which partitions thepixel region and other pixel regions arranged close to the pixel region,and a light reflection function is imparted to at least a side wallsurface of the opening portion of the bank film and a pigment whichdecreases the optical transmissivity of the bank film per se iscontained in the bank film.

EXAMPLE 5

An organic EL display device according to the present invention ischaracterized in that, on the premise of the constitution of the Example1, a metal oxide film is applied to at least the side wall surface ofthe opening portion of the bank film by coating.

The present invention is not limited to the above-mentionedconstitutions, and various modifications are conceivable withoutdeparting from the technical concept of the present invention.

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1 is a diagrammatic cross-sectional view taken along line I-I inFIG. 3, showing one embodiment of an organic EL display device accordingto the present invention;

FIG. 2 is an equivalent circuit diagram showing one embodiment of adisplay part of the organic EL display device according to the presentinvention;

FIG. 3 is a diagrammatic plan view showing one embodiment of a pixel ofthe organic EL display device according to the present invention; and

FIG. 4 is a diagrammatic cross-sectional view showing another embodimentof the organic EL display device according to the present invention.

DETAILED DESCRIPTION

Hereinafter, various embodiments of a liquid crystal display deviceaccording to the present invention will be explained in conjunction withdrawings.

Embodiment 1

<<Equivalent Circuit of Display Portion>>

FIG. 2 is an equivalent circuit diagram showing one embodiment of adisplay region of an organic EL display device according to the presentinvention.

In the display region, first of all, gate signal lines GL extend in thex direction and are arranged in parallel in the y direction, as seen inthe drawing, and, further, drain signal lines DL extend in the ydirection and are arranged in parallel in the x direction, as seen inthe drawing. Rectangular regions which are bounded by these gate signallines GL and drain signal lines DL constitute pixel regions, and anarray of these pixel regions constitute the display region.

Each pixel region includes a thin film transistor TFT, which is turnedon in response to a scanning signal from the gate signal line GL at oneside (upper side in the drawing), and a pixel electrode PX to which avideo signal is supplied from the drain signal line DL at one side (leftside in the drawing) through the thin film transistor TFT. The pixelelectrode PX is configured to sandwich a light emitting material layertogether with a counter electrode (not shown in the drawing), and lightis emitted from the light emitting material layer in response to anelectric current which is made to flow between the pixel electrode PXand the counter electrode. Here, a counter electrode is formed in commonwith the respective pixel regions, and a signal which becomes areference with respect to the video signal is supplied to the counterelectrode.

Due to such a constitution, the liquid crystal display device is drivensuch that the respective gate signal lines GL are sequentially selectedone after another in response to supply of the scanning signal, whilethe video signal is supplied to the respective drain signal lines DL oneafter another at the timing of selection of the gate signal lines GL.

<<Constitution of Pixel>>

FIG. 3 is a plan view showing one embodiment of the above-mentionedpixel region. Further, a cross section taken along a line I-I in FIG. 3is shown in FIG. 1.

In FIG. 3, at a left upper portion of each pixel region formed on asurface of the substrate SUB1, made of glass (see FIG. 1), for example,a semiconductor layer PS formed of a polysilicon layer, which extends inthe x direction in the drawing, is formed. The semiconductor layer PSconstitutes a semiconductor layer of the thin film transistor TFT.

Then, on the surface of the substrate SUB1, an insulating film GI isformed such that the insulating film GI covers also the semiconductorlayers PS (see FIG. 1). The insulating film G1 functions as gateinsulating films in regions where the thin film transistors TFT areformed.

On a surface of the insulating film GI, the gate signal lines GL whichextend in the x direction and are arranged in parallel in the ydirection are formed. The gate signal lines GL are configured to definethe pixel regions together with drain signal lines DL to be describedlater.

Further, the gate signal line GL has a portion thereof which constitutesan extension portion which extends so as to traverse a substantiallycenter portion of the semiconductor layer PS, and this extension portionfunctions as a gate electrode GT of the thin film transistor TFT. Afterthe formation of the gate electrode GT, impurities ions are implantedusing the gate electrode GT as a mask so as to cause portions of thesemiconductor layer PS, other than a portion of the semiconductor layerPS right below the gate electrode GT, to have a low resistance.

On the surface of the substrate SUB1, an insulating film IN (see FIG. 1)is formed such that the insulating film IN also covers the gate signallines GL (gate electrodes GT). The insulating film IN functions as aninterlayer insulating film with respect to the gate signal lines GL inregions where the drain signal lines DL. On a surface of the insulatingfilm IN, the drain signal lines DL, which extend in the y direction andare arranged in parallel in the x direction, are formed. A portion ofthe drain signal line DL extends to an end portion of the semiconductorlayer PS and is connected to the semiconductor layer PS via a throughhole TH1, which is preliminarily formed in the insulating film IN andthe insulating film GI in a penetrating manner. That is, the extensionportion of the drain signal line DL functions as a drain electrode SD1of the thin film transistor TFT.

Further, on another end portion of the semiconductor layer PS, a sourceelectrode SD2 is formed so as to be connected to the semiconductor layerPS via a through hole TH2, which is preliminarily formed in theinsulating film IN and the insulating film GI in a penetrating manner.An extension portion which is caused for connecting the source electrodeSD2 to the pixel electrode PX is formed on the source electrode SD2.

On the surface of the substrate SUB1 on which the drain signal lines DL(drain electrodes SD1) and the source electrodes SD2 are formed, aninsulating film IL (see FIG. 1) is formed. On an upper surface of theinsulating film IL, a pixel (anode) electrode PX is formed at the centerof each pixel region, except for a minute periphery of the pixel regionPX, and the pixel electrode PX is connected to the source electrode SD2of the thin film transistor TFT via a through hole TH3 formed in theinsulating film IL. Here, the pixel electrode PX is formed of a lighttransmitting conductive film, such as ITO (Indium Tin Oxide), forexample, for allowing light from a light emitting material layer FLR topass therethrough to the substrate SUB1 side.

On an upper surface of the pixel electrode PX, a light emitting materiallayer FLR is stacked by way of a hole-transporting layer HTP, and anelectron injection layer EPR is stacked on the hole-transporting layerHTP. These respective layers, including the light emitting materiallayer FLR, are formed in a state such that these layers are partitionedfrom the light emitting material layer and the like in other neighboringpixel regions by a bank (partition wall) film BNK that is made of anorganic material layer. Here, the bank film BNK is formed after formingthe pixel electrodes PX, for example, and it is formed such that a resinfilm or the like, for example, is applied to the whole area of the uppersurface of the transparent substrate SUB1 by coating; and, thereafter,openings which expose major portions of the centers of the pixelelectrodes PX, except for peripheries of the pixel electrodes PX, areformed in the resin film or the like.

Further, with respect to the bank film BNK, on a surface thereof and onthe surfaces of the side walls of the above-mentioned openings, a lightreflection film LRL, which is made of a material different from thematerial of the bank film BNK and has a relatively small film thickness,is formed. The light reflection film LRL may be formed to producereflection of light on an interface with the bank film BNK by selectinga material which, per se, does not have a light reflection function andhas a refractive index n₂ which is smaller than the refractive index n₁of the material of the bank film BNK, or a material which, per se, has alight reflection function.

In the former case, for example, an acrylic resin (n₁=1.49 to 1.50) maybe used as the material of the bank film BNK, while polyimide (n₂=1.52to 1.54), polystyrene (n₂=1.59 to 1.50), polycarbonate resin (n₂=1.58 to1.59), phenol resin (n₂=1.58 to 1.66) or epoxy resin (n₂=1.55 to 1.61)may be used as the material of the light reflection film LRL.

Further, methacrylic resin (n₁=1.49) may be used as the material of thebank film BNK, while polyimide (n₂=1.52 to 1.54), polystyrene (n₂=1.59to 1.50), polycarbonate resin (n₂=1.58 to 1.59), phenol resin (n₂=1.58to 1.66) or epoxy resin (n₂=1.55 to 1.61) may be used as the material ofthe light reflection film LRL.

Further, low refractive polyimide may be used as the material of thebank film BNK, while a high refractive polyimide may be used as thematerial of the light reflection film LRL.

Further, fluororesin (n₁=1.35) may be used as the material of the bankfilm BNK, while polyimide (n₂=1.52 to 1.54), polystyrene (n₂=1.59 to1.50), polycarbonate resin (n₂=1.58 to 1.59), phenol resin (n₂=1.58 to1.66) or epoxy resin (n₂=1.55 to 1.61) may be used as the material ofthe light reflection film LRL.

Further, silicon resin (n₁=1.43) may be used as the material of the bankfilm BNK, while polyimide (n₂=1.52 to 1.54), polystyrene (n₂=1.59 to1.50), polycarbonate resin (n₂=1.58 to 1.59) or phenol resin (n₂=1.58 to1.66) may be used as the material of the light reflection film LRL.

Further, resin having a refractive index of less than 1.5 may be used asthe material of the bank film BNK, while a resin having a refractiveindex of equal to or more than 1.5 may be used as the material of thelight reflection film LRL.

Further, a silicon oxide film (n₁=1.46) may be used as the bank filmBNK, while a resin having a refractive index of equal to or more than1.5, or silicon nitride, may be used as the material of the lightreflection film LRL.

Further, in the latter case, a silicon oxide film (n₁=1.46) may be usedas the bank film BNK, while a metal oxide (Al₂O₃, MgO, HfO₂, ZrO₂,Cr₂O₃, TiO, Ta₂O₅, CaO, BaO) may be used as the material of the lightreflection film LRL.

Further, in the latter case, a silicon nitride may be used as thematerial of the bank film BNK, while a metal oxide (Al₂O₃, MgO, HfO₂,ZrO₂, Cr₂O₃, TiO, Ta₂O₅, CaO, BaO) may be used as the material of thelight reflection film LRL.

Here, as the acrylic resin, OPTMERRPC series (Heat resistant transparentphotoresist) (a product of JSR Corporation, (Tokyo, Japan)), a resistmaterial of Tokyo Ohka Kogyo Co., Ltd. (Tokyo, Japan) or the like may beused. As the polyimide resin, OPI-N-series (a product of HitachiChemical Co., Ltd, Tokyo, Japan), PHOTONEECER series (photosensitivepolyimide coatings) (a product of Toray Industries, Inc. (Tokyo, Japan)or the like may be used. As the phenol resin, WIX-2 (a product of NihonZeon Co., Ltd (Tokyo Japan)), a positive photoresist (a product of JSRCorporation or Tokyo Ohka Kogyo Co., Ltd. (Tokyo, Japan) or the like maybe used. As the fluoric resin, a fluoric resin resist or the like may beused. As the low refractive polyimide, OPTOREZR (Low BirefringentPolymer Series) (a product of Hitachi Chemical Co., Ltd, Tokyo, Japan)or the like may be used. As the high refractive polyimide, OPI-N-series(a product of Hitachi Chemical Co., Ltd, Tokyo, Japan) or the like maybe used.

On upper surfaces of the electron injection layer EPR and the bank filmBNK, a common (cathode) electrode CT, which is provided in common withrespective pixel regions, is formed. The substrate SUB2, which is madeof glass, for example, is laminated to an upper surface of the counterelectrode CT by way of a high molecular resin seal PSL.

By supplying an electric current to the light emitting material layerFLR, which is interposed between the pixel electrode PX and the counterelectrode CT, the light emitting material layer FLR emits light and thelight LT can be observed through the pixel electrode PX and thesubstrate SUB1. Here, the voltage signal which becomes a reference withrespect to the video signal is applied to the counter electrode CT andthe video signal is applied to the pixel electrode PX from the drainsignal line DL through the thin film transistor TFT. Further, the thinfilm transistor TFT is switched on in response to the scanning signalfrom the gate signal line GL.

<<Advantageous Effects>>

According to the above-mentioned organic EL display device, since thelight reflection function is applied to the side wall surfaces of theopening portions formed in the bank film BNK, when the light from thelight emitting material layers FLR is irradiated through the openingportions, even when some light may be incident on the side-wall-surfaceside, most of the light is reflected on the side wall surfaces, and thereflected light can arrive at the viewer side in the same manner asother light.

In view of the above, the light from the light emitting material layerFLR is irradiated to the viewer side without wasting light, whereby thetake-out efficiency of light can be enhanced.

Further, for the above-mentioned reason, even when there exists lightwhich is incident of the bank film BNK, the amount of such light issmall, and, hence, there is no possibility that the light which passesthrough the bank film BNK reaches other neighboring pixel regions. Thatis, it is possible to obviate the drawback that the irradiation quantityof light corresponding to the video signal in each pixel is changed bythe light from a neighboring pixel which passes through the bank filmBNK, whereby the color purities of each pixel can be enhanced.

Embodiment 2

FIG. 4 is a constitutional view showing another embodiment of the pixelof the organic EL display device according to the present invention andcorresponds to FIG. 1.

In the case shown in FIG. 1, the organic EL display device is configuredsuch that the light from the light emitting material layer FLR is takenout from the pixel electrodes PX and the substrate SUB1 side. However,the organic EL display device shown in FIG. 4 is configured such thatthe light from the light emitting material layer FLR is taken out fromthe counter electrode CT and the substrate SUB2 side. Accordingly, inthe case shown in FIG. 4, at least the counter electrode CT is formed ofa light transmitting conductive film, such as ITO (Indium Tin Oxide),for example, and the substrate SUB2 is constituted of a transparentsubstrate made of glass or the like.

Also, in this case, with respect to the bank film BNK which partitionsthe light emitting material layers FLR or the like, light reflectionfilms LRL, similar to the light reflection films indicated in theembodiment 2, are formed on the surface of the bank film BNK and theside wall surfaces of the opening portions, wherein the light reflectionfilms LRL, per se, have a light reflection function, or have a lightreflection function together with the bank film BNK.

Embodiment 3

In the above-mentioned embodiment, as the material of the bank film BNK,the materials which are introduced in the embodiment 1, for example, maybe selected. However, it is needless to say that these materials maycontain a pigment which positively reduces the optical transmissivity,for example, a black pigment or the like.

In this case, even when the light from the light emitting material layerFLR may be slightly incident on the bank film BNK, the light is absorbedin the bank film BNK, and it is possible to completely eliminate thepossibility that the light reaches another pixel region which isarranged close to the pixel region. This is because that there is nopossibility that the emission quantity of light corresponding to thevideo signal in each pixel is influenced by light from the pixel throughthe bank film BNK, and, hence, the color purity of each pixel can beenhanced.

Embodiment 4

In the above-mentioned embodiments, the optical reflection film LRL isconfigured so as to be formed on the side wall surfaces of the openingsformed in the bank film BNK and on the surface of the bank film BNK.However, it is needless to say that the present invention is not limitedto such constitutions, and the optical reflection film LRL may be formedonly on the side wall surfaces of the openings formed in the bank filmBNK. This is because, when the light from the light emitting materiallayer FLR enters the inside of the bank film BNK, the major portion ofthe light is constituted by the light which enters through the side wallsurface of the openings formed in the bank film BNK.

Embodiment 5

In the above-mentioned embodiments, the light reflection film LRL isformed on the upper surface of the bank film BNK. However, the presentinvention is not limited to such a constitution, and a light absorptionfilm may be formed on the upper surface of the bank film BNK. This lightabsorption film is a film which causes the light absorption film toabsorb light from the light emitting material layer FLR. The lightabsorption film may be constituted of a film which contains a blackpigment or the like, for example. In view of the this, when a lightabsorption function is imparted to the bank film BNK per se, the lightabsorption film need not be provided to the bank film BNK.

The above-mentioned respective embodiments may be used in a single formor in combination. This is because the advantageous effects of therespective embodiments can be obtained in a single form orsynergistically.

As can be clearly understood from the above explanation, according tothe organic EL display device of the present invention, the lighttake-out efficiency can be enhanced.

1. An organic EL display device, having a plurality of pixel regionswhich are partitioned from one another, is characterized in that: atleast one electrode, a light emitting material layer and anotherelectrode are stacked on each pixel region formed on a surface of asubstrate, the light emitting material layer is formed in a state suchthat the light emitting material layer is filled in the inside of anopening portion formed in a partition which partitions the pixel regionand other pixel regions arranged close to the pixel region, and a lightreflection material is imparted to at least a side wall surface of theopening portion of the partition.
 2. An organic EL display device,having a plurality of pixel regions which are partitioned from oneanother, is characterized in that: at least one electrode, a lightemitting material layer and another electrode are stacked on each pixelregion formed on a surface of a substrate, the light emitting materiallayer is formed in a state such that the light emitting material layeris filled in the inside of an opening portion formed in a partitionwhich partitions the pixel region and other pixel regions arranged closeto the pixel region, and a material layer having an optical refractiveindex which differs from an optical refractive index of a material ofthe partition is formed on at least a side wall surface of the openingportion of the partition.
 3. An organic EL display device according toclaim 2, wherein the material layer having the optical refractive indexwhich differs from the optical refractive index of the material of thepartition has the optical refractive index thereof set larger than theoptical refractive index of the partition.
 4. An organic EL displaydevice, having a plurality of pixel regions which are partitioned fromone another, is characterized in that: at least one electrode, a lightemitting material layer and another electrode are stacked on each pixelregion formed on a surface of a substrate, the light emitting materiallayer is formed in a state such that the light emitting material layeris filled in the inside of an opening portion formed in a partitionwhich partitions the pixel region and other pixel regions arranged closeto the pixel region, and a light reflection material is imparted to atleast a side wall surface of the opening portion of the partition and apigment which decreases an optical transmissivity of the partition iscontained in the partition.